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`MAsk for various shape properties when shapes are dropped on the drawing page. Ask on Drop visXAsk
Electrical Electrical
Metal-oxide semiconductor field-effect transistor. N-type or P-type channel can be specified.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
Show Envelope Hide Envelope
_Enhancement _Depletion
_2 Gates _1 Gate
_Hide substrate connection User.Substrate
Connect substrate internally User.Substrate
Bring out substrate connection User.Substrate
Hide Envelope
_Depletion
_2 Gates
Vis_TGEE.chm!#27826 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
`<P-channel metal-oxide semiconductor field-effect transistor.
solid,State,Devices,Communications,field,Metal,vacuum,EE,channel,transistor,Semiconductors,Electron,Tubes,technology,effect,Semiconductor,MOSFET,oxide
Configure MOSFET...
_Show Envelope _Hide Envelope
Show Envelope
Show the envelope.
Change to depletion.
Change to 2 gates.
P-Type
N-Type
_Hide Envelope
Reposition Text
Type Depletion;Enhancement `?Select whether the transistor is enhancement or depletion type. Enhancement
No. of Gates Select the number of gates.
Substrate Connection None;Internal;External `(Select the type of substrate connection. External
Channel `)Select the type of channel (P or N-type). P-Type;N-Type P-Type
Envelope `.Select whether or not the envelope is visible. Invisible;Visible Visible
Bipolar. PNP or NPN can be specified.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27811
Type Select the type of transistor. PNP;NPN
_Set to NPN _Set to PNP
_Set to NPN
Bipolar PNP or NPN.
`esolid,State,Devices,Communications,vacuum,EE,PNP,Semiconductors,Electron,Tubes,technology,NPN,Bipolar
Junction FET. N-type or P-type channel can be specified.
he required form.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27822
_Set to N-Type Channel _Set to P-Type Channel
Hide the envelope.
_Set to N-Type Channel
N or P Channel Junction FET.
`jsolid,State,Devices,Communications,junction,vacuum,EE,channel,Semiconductors,Electron,Tubes,technology,FET
Transverse-biased base. NPN or PNP can be specified.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27835
`"NPN or PNP transverse-biased base.
`tsolid,State,Devices,Communications,base,vacuum,EE,PNP,Semiconductors,Electron,Tubes,technology,NPN,transverse,biased
Transistor with ohmic connection to the intrinsic region. PNIP, PNIN, NPIP or NPIN can be specified.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27831
Configure Ohmic...
`RPNIP, PNIN, NPIP or NPIN transistor with ohmic connection to the intrinsic region.
solid,State,Devices,Communications,connection,vacuum,EE,transistor,Semiconductors,Electron,Tubes,technology,PNIP,ohmic,intrinsic,region,PNIN,NPIP,NPIN
Select the type of transistor. Type PNIP;PNIN;NPIP;NPIN PNIP
Unijunction FET. N-type or P-type channel can be specified.
orm.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27844
N or P Channel Unijunction FET.
`msolid,State,Devices,Communications,vacuum,EE,channel,Semiconductors,Electron,Tubes,technology,Unijunction,FET
Darlington transistor. PNP or NPN can be specified.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27816
`#Darlington transistor - NPN or PNP.
`ssolid,State,Devices,Communications,vacuum,EE,PNP,transistor,Semiconductors,Electron,Tubes,technology,NPN,Darlington
Latch. Envelope can be shown or hidden.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27823
Latch.
`[solid,State,Devices,Communications,vacuum,EE,Semiconductors,Electron,Tubes,technology,Latch
Insulated gate field effect transistor with N-type channel. Substrate connection can be specified.
Vis_TGEE.chm!#27820 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
Configure IGFET N-type...
type,solid,State,Gate,Devices,Communications,field,Insulated,vacuum,EE,transistor,Semiconductors,Electron,Tubes,technology,effect,IGFET
Substrate Connection `%Choose substrate connection required. None;Internal;External None
Type Choose type. Enhancement;Depletion Enhancement
No. of Gates Choose one or two gates.
Insulated gate field effect transistor with P-type channel. Substrate connection can be specified.
Vis_TGEE.chm!#27821 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
Configure IGFET P-type...
type,solid,State,Gate,Devices,Communications,field,Insulated,vacuum,EE,channel,transistor,Semiconductors,Electron,Tubes,technology,effect,IGFET
`;Insulated gate field effect transistor with N-type channel.
`?Select whether the transistor is enhancement or depletion type. Type Depletion;Enhancement Enhancement
Substrate Connection `(Select the type of substrate connection. None;Internal;External None
Semiconductor diode; semiconductor rectifier diode; metallic rectifier.
visibility.
Vis_TGEE.chm!#27818 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
Configure Diode...
`isolid,State,Devices,Communications,vacuum,EE,diode,Semiconductors,Electron,Tubes,technology,Semiconductor
Semiconductor diode.
Select type of diode. Type `+General;Reverse Blocking;Reverse Conducting General
Tunnel diode. Envelope can be shown or hidden.
sibility.
Vis_TGEE.chm!#27841 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
`bsolid,State,tunnel,Devices,Communications,vacuum,EE,diode,Semiconductors,Electron,Tubes,technology
Tunnel diode
`.Select whether or not the envelope is visible. Envelope Invisible;Visible Visible
Zener Diode.
Right mouse to switch envelope visibility.
Vis_TGEE.chm!#27847 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
`asolid,State,Devices,Communications,vacuum,EE,diode,Semiconductors,Electron,Tubes,technology,Zener
Zener diode
Backward diode (unitunnel diode). Envelope can be shown or hidden.
Vis_TGEE.chm!#27810 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
`nsolid,State,Devices,Communications,vacuum,EE,diode,Semiconductors,Electron,Tubes,technology,Backward,unitunnel
`!Backward diode (unitunnel diode).
Capacitive diode. Envelope can be shown or hidden.
nvelope visibility.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27845
Capacitive diode.
`osolid,State,Devices,Communications,vacuum,EE,diode,Semiconductors,Electron,Tubes,technology,Varactor,Capacitive
Diac. Envelope can be shown or hidden.
tch envelope visibility.
Vis_TGEE.chm!#27817 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
`nsolid,State,Devices,Communications,vacuum,EE,diode,Semiconductors,Electron,Tubes,technology,Diac,Bidirectional
Bidirectional diode.
Thyristor, bi-directional triode-type; triac; gated switch.
pe visibility.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27836
`:Thyristor, bidirectional triode-type; triac; gated switch.
solid,State,Switch,Devices,Communications,vacuum,EE,Semiconductors,Electron,Tubes,technology,Bidirectional,Triac,triode,thyristor,type;,triac;,gated
Thyristor, reverse-blocking tetrode-type; semiconductor controlled switch. Envelope can be shown or hidden.
Vis_TGEE.chm!#27815 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
solid,State,Switch,Devices,Communications,blocking,vacuum,controlled,EE,Semiconductors,Electron,Tubes,technology,Semiconductor,thyristor,Reverse,tetrode,thyristor;
`DReverse blocking tetrode thyristor; semiconductor controlled switch.
Thyristor, reverse-blocking triode-type; semiconductor controlled rectifier. P-type or N-type gate can be specified.
Vis_TGEE.chm!#27814 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
`!Configure Controlled rectifier...
solid,State,Devices,Communications,vacuum,controlled,EE,Rectifier,Semiconductors,Electron,Tubes,technology,Semiconductor,thyristor,Reverse,tetrode,thyristor;,conducting
`IReverse conducting tetrode thyristor; semiconductor controlled rectifier.
Gate Specify the type of gate. Unspecified;P-type;N-type Unspecified
Gate turn off rectifier. Envelope can be shown or hidden.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27842
Gate turn off rectifier.
`mturn,Off,solid,State,Gate,Devices,Communications,vacuum,EE,Rectifier,Semiconductors,Electron,Tubes,technology
Four layer diode.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27819
`fsolid,State,Devices,Layer,Communications,four,vacuum,EE,diode,Semiconductors,Electron,Tubes,technology
Light emitting diode. Subselect arrows and change line arrow direction for photosensitive diode.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27824
Set to Photosensitive Set to Light emitting
Set to Light emitting
Type `(Select light emitting or photosensitive. Light emitting;Photosensitive Light emitting
``Light emitting diode. Subselect arrows and change line arrow direction for photosensitive diode.
change,direction,line,Arrow,solid,Light,State,Devices,Communications,arrows,vacuum,subselect,EE,diode,Semiconductors,Electron,Tubes,technology,emitting,LED,photo,photosensitive
Breakdown diode. Unidirectional or bi-directional can be specified.
lect the required form.
`?Copyright (c) 2001 Microsoft Corporation. All rights reserved. Vis_TGEE.chm!#27812
_Set to Bi-directional _Set to Uni-directional
_Set to Bi-directional
`2Breakdown diode (unidirectional or bidirectional).
solid,State,Devices,Communications,vacuum,unidirectional,EE,diode,Semiconductors,Electron,Tubes,technology,Bidirectional,Breakdown
Enter device label. Label
Tube diode with directly or indirectly heated cathode.
mouse to select the required form.
Vis_TGEE.chm!#27837 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
_Indirectly Heated _Directly Heated
solid,State,Devices,Communications,directly,tube,Heated,vacuum,EE,diode,Semiconductors,Electron,Tubes,technology,indirectly,cathode
`0Tube diode (directly/indirectly heated cathode).
_Directly Heated
Tube triode with directly or indirectly heated cathode.
Vis_TGEE.chm!#27840 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
solid,State,Devices,Communications,directly,tube,Heated,vacuum,EE,Semiconductors,Electron,Tubes,technology,triode,indirectly,cathode
`1Tube triode (directly/indirectly heated cathode).
Tube tetrode with directly or indirectly heated cathode.
Vis_TGEE.chm!#27839 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
solid,State,Devices,Communications,directly,tube,Heated,vacuum,EE,Semiconductors,Electron,Tubes,technology,tetrode,indirectly,cathode
`2Tube tetrode (directly/indirectly heated cathode).
External Connection
Externally connected suppressor grid.
Tube pentode with directly or indirectly heated cathode.
Vis_TGEE.chm!#27838 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
_Internal Connection _External Connection
solid,State,Devices,Communications,directly,tube,Heated,vacuum,EE,Semiconductors,Electron,Tubes,technology,indirectly,cathode,pentode
`2Tube pentode (directly/indirectly heated cathode).
_Internal Connection
Turn-off triode thyristor.
Right mouse to select the required form.
Vis_TGEE.chm!#27843 `?Copyright (c) 2001 Microsoft Corporation. All rights reserved.
_Unspecified
P-Type Gate
N-Type Gate
`oturn,Off,solid,State,Devices,Communications,vacuum,EE,Semiconductors,Electron,Tubes,technology,triode,thyristor
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MOSFET
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SubType
Bipolar
Junction
Transverse
Ohmic
Unijunction
Black fill
Darlington
Latch
IGFET N-type
Gates
IGFET P-type
Diode
Backward diode
Varactor
Diac
Triac
Controlled switch
Controlled rectifier
Turn off rectifier
Four layer diode
Arr. Very Small End
LED / photo-diode
Breakdown diode
Label
Tube diode
Heating
Tube triode
Tube tetrode
Tube pentode
Conn
Turn-off triode